Defect engineering using irradiation such as electrons and ion beams is one of the interesting topics.
We study nitrogen-vacancy (NV) centers in diamonds,
especially from the point of view of the creation methods of NV centers using accelerators.
If 15N (natural abundance is only 0.37 %) ions are implanted into diamonds,
we can distinguish NV centers created from implanted N (15N) or from residual N (14N) in diamond by measurement of optically detected magnet resonance (ODMR).
In the presentation,
the study of the creation yield of NV centers using 10 MeV-15N ion microbeams will be introduced.
The coherence time (T2) of NV centers created in 12C enriched CVD diamonds by N implantation will be presented.
Exploring of single photon centers in SiC will be also introduced.