1. 2016: UFSD1 First 300  thick LGAD (FBK 6” wafer )

2. 2017: UFSD2 First 50  thick LGAD (FBK 6” wafer )

Gain layer doping: Boron, Gallium, Boron + Carbon,

3. Fall 2018:  UFSD3 50  LGAD  (FBK 6” wafer), produced with the stepper  

     (many Carbon levels, studies of interpad design)

4. June 2019: UFSD3.1 50  LGAD (internal FBK) interpad design.

5. June 2019 RSD1 Resistive AC-LGAD (FBK 6” wafer

6. June 2020: UFSD3.2 25, 35, 45, and 55  LGAD, carbon studies,

     deep, shallow gain implant (FBK 6” wafer

7. Q1/2021: Trench-Isolated (FBK 6” wafer)

8. Q2/2021: RSD2 (FBK 6” wafer)

9. Q2/2021: ExFlux0 -> optimized for extreme fluence

10. Q4/2021: UFSD4 (FBK 6” wafer, ATLAS, CMS Timing layer)

Future:

11. 2022: ExFlux1 -> optimized for extreme fluence

12. 2022: SEB-resistant -> optimized for extreme fluence

13. 2022: Trench- Isolated2 -> (AIDAInnova)